![]() ![]() Typical Discrete IGBT semiconductor device IGBT history and development ![]() The IGBT has also been referred to by several other names including: and IGT: insulated gate transistor, IGR: insulated gate rectifier, COMFET: conductivity modulated field effect transistor, GEMFET: gain enhanced MOSFET, BiFET: bipolar FET, and injector FET. The need for the insulated gate bipolar transistor, IGBT, arose because both MOSFETs and bipolar junction transistors, BJTs, have their limitations, particularly when it comes to high current applications.Īccordingly the invention of the IGBT transistor enabled the advantages of both types of device to be combined into a single semiconductor device. The advantage of IGBT transistors is that they combine many of the features of MOSFETs and bipolar transistors providing the high voltage and current handling capabilities of bipolar transistors with the high-speed switching and low gate current performance of power MOSFETs. Insulated gate bipolar transistors or IGBTs are a form of discrete semiconductor device that are generally used for power applications: power supplies, power switching, etc. What is an IGBT Insulated Gate Bipolar Transistor IGBTs are used for many power switching and other power applications and they are an amalgamation of field effect transistor and bipolar transistor technology.įET basics FET specifications JFET MOSFET Dual gate MOSFET Power MOSFET MESFET / GaAs FET HEMT & PHEMT FinFET technology IGBT Silicon carbide, SiC MOSFET GaN FET / HEMT ![]()
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